Planned for Next Quarter
*Implement optical cavities to optimize SiGe/Si HIP detectors, and characterize performance. (JPL)
*Fabricate "AIRS type" InGaAs/GaAs QWIP linear array. (JPL)
*Demonstrate PV detector operation in As-rich InAsSb superlattice material, with cutoff wavelength > 12 um. (JPL)
*Deliver TES PC arrays of HgZnTe to JPL; demonstrate long-wave HgZnTe PV devices. (LaRC)
*Complete fabrication of "insurance lot" of 1 x 32 low-temperature readouts at Hughes Technology Center. Complete characterization of 1st lot; initiate low-temperature testing of "insurance lot". (ARC)
*Determine noise and pixel operability of low-background performance of the (second) 256 x 256 Si:As IBC array. (ARC)